GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications
نویسندگان
چکیده
As a highly sensitive strain gauge element, GaAs-based resonant tunneling diode (RTD) has already been applied in microelectromechanical system (MEMS) sensors. Due to poor mechanical properties and high cost, GaAs-based material has been limited in applications as the substrate for MEMS. In this work, we present a method to fabricate the GaAs-based RTD on Si substrate. From the experimental results, it can be concluded that the piezoresistive coefficient achieved with this method reached 3.42 × 10-9 m2/N, which is about an order of magnitude higher than the Si-based semiconductor piezoresistors.
منابع مشابه
Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application
Resonant Tunneling Diodes (RTD) and High Electron Mobility Transistor (HEMT) based on GaAs, as the piezoresistive sensing element, exhibit extremely high sensitivity in the MEMS sensors based on GaAs. To further expand their applications to the fields of MEMS sensors based on Si, we have studied the optimization of the GaAs epitaxy layers on Si wafers. Matching superlattice and strain superlatt...
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